SSG60N60 datasheet(2/2 Pages) SSDI

2 / 2 page

SOLID STATE DEVICES, INC.

600

V(BR)CES

Collector - Emitter Breakdown Voltage

(VGE = 0V, IC = 250uA)

Gate - Emitter Threshold Voltage

(VGE = VCE, IC = 250mA)

µµµµµA

500

5.0

ICES

Zero Gate Voltage Collector Current

(VCE = 600V, VGE = 0V)

120

IGES

Gate - Emitter Leackage Current

(VGE = 30V, VCE = 0V)

Ciss

MIN

MAX

ELECTRICAL CHARACTERISTICS 5/

SYMBOL

UNITS

-pF

Output Capacitance

(VCE = 25V, VGE = 0V, f = 1MHz)

Coss

(VCC = 400V, IC = 50ADC,

VGE = 15 / 0V, RG = --

Ω,

tP = 10

µsec, Duty Cycle

≤ 1%

Tj = 150

oC)

Turn-On Delay Time

td(on)

nsec

VGE (th)

NOTES:

* Pulse Test: Pulse Width = 300us, Duty Cycle = 2%

1/ For Ordering Information, Price, and Availability Contact Factory.

2/ Screening per MIL-PRF-19500.

3/ For Package Outlines Contact Factory.

4/ Up and Down Bend Configurations Available for N and P (TO-258

and TO-259) Packages Only.

5/ All Electrical Characteristics @25oC, Unless Otherwise Specified.

SSG60N60

SERIES

Reverse Transfer Capacitance

(VCE = 25V, VGE = 0V, f = 1MHz)

Crss

Turn-Off Delay Time

Rise Time

nsec

td(off)

nsec

2.0

Collector - Emitter Saturation Voltage

(VGE = 15V, IC = 60A)

VCE (SAT)

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

PIN ASSIGNMENT

Emitter

Gate

Pin 3

Collector

PACKAGE

Pin 2

Pin1

Pin 1

TO-258

TO-259

Available Part Numbers:

SSG60N60N

SSG60N60NDB

SSG60N60NUB

Pin 3

Pin 2

Pin 1

SMD2

Input Capacitance

(VCE = 25V, VGE = 0V, f = 1MHz)

-pF

Fall Time

nsec

7500

TYP

720

130

1.67

175

TJ = 25

TJ = 150

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