SOLID STATE DEVICES, INC.

SSG60N60

SERIES

DATA SHEET #:

TG0004A

MAXIMUM RATINGS

SYMBOL

UNITS

VALUE

200

Peak Collector Current

Collector-Emitter Voltage

600

Amps

Volts

W

85 AMP

600 VOLTS

FAST

POWER IGBT

Thermal Resistance,

Junction to Case

+

+

+

+

+20

Gate Emitter Voltage

Volts

DESIGNER'S DATA SHEET

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

SSG60N60 N

_ TX

TX

= TX Level

TXV = TXV Level

S

= Space Level

UB = Up Bend

DB = Down Bend

= TO-258, Isolated

P

= TO-259, Isolated

S2 = SMD2

APPLICATION NOTES:

•

Positive Temperature Coefficient for Ease of

Paralleling

•

High Current Switching for Motor Drives and

Inverters

•

Low Saturation Voltage at High Currents.

•

Low Switching Losses.

•

High Short Circuit Capability

•

MOS Input, Voltage Controlled.

•

Hermetic Sealed Construction.

•

TX, TXV, and S-Level Screening Available.

Operating and Storage Temperature

-65 to +200

350

0.5

0.4

85

60

Continuous Collector Current

Average Diode Current

Amps

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

TO-259 (P)

SMD2 (S2)

TO-258 (N)

N, P

S2