Symbol

Parameter

Condition

Min.

Typ.

Max.

Unit

Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)

(BR)DSS

V

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

30

--

--

V

DSS

I

Zero Gate Voltage Drain Current(Tc=25℃)

VDS=30V,VGS=0V

--

--

1

μA

Zero Gate Voltage Drain Current(Tc=125℃)

VDS=30V,VGS=0V

--

--

100

μA

GSS

I

Gate-Body Leakage Current

VGS=±20V,VDS=0V

--

--

±100

nA

GS(TH)

V

Gate Threshold Voltage

VDS=VGS,ID=250μA

1

2.5

V

DS(ON)

R

Drain-Source On-State Resistance ②

VGS=10V, ID=8A

--

16

mΩ

DS(ON)

R

Drain-Source On-State Resistance ②

VGS=4.5V, ID=4A

--

24

mΩ

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)

iss

C

Input Capacitance

VDS=15V,VGS=0V,

f=1MHz

--

455

--

pF

oss

C

Output Capacitance

--

75

--

pF

rss

C

Reverse Transfer Capacitance

--

60

--

pF

g

R

Gate Resistance

f=1MHz

--

3.3

--

Ω

g

Q

Total Gate Charge

VDS=15V,ID=8A,

VGS=10V

--

11

--

nC

gs

Q

Gate-Source Charge

--

3

--

nC

gd

Q

Gate-Drain Charge

--

4

--

nC

Switching Characteristics

d(on)

t

Turn-on Delay Time

VDD=15V,

ID=8A,

RG=3Ω,

VGS=10V

--

7

--

ns

r

t

Turn-on Rise Time

--

10

--

ns

d(off)

t

Turn-Off Delay Time

--

22

--

ns

f

t

Turn-Off Fall Time

--

7

--

ns

Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated)

SD

V

Forward on voltage

ISD=8A,VGS=0V

--

0.9

1.2

V

rr

t

Reverse Recovery Time

Tj=25℃,Isd=8A,

VGS=0V

di/dt=500A/μs

--

9.5

--

ns

rr

Q

Reverse Recovery Charge

--

11.8

--

nC

NOTE:

① Repetitive rating; pulse width limited by max. junction temperature.

② Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = 6A, VGS =10V. Part not recommended for use above this value

③ Pulse width ≤ 300μs; duty cycle≤ 2%.

Electrical Characteristics

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UT4822G-S08-R

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