UT4822G-S08-R datasheet(3/4 Pages) BYCHIP

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UT4822G-S08-R Scheda tecnica(PDF) 3 Page - BYCHIP ELECTRONICS CO., LIMITED

Il numero della parte	UT4822G-S08-R

Spiegazioni elettronici	Dual N-channel Enhancement Mode Power MOSFET

PDF	4 Pages

Scroll/Zoom	100%

Produttore elettronici	BYCHIP [BYCHIP ELECTRONICS CO., LIMITED]

Homepage	http://www.bychip.cn/

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3 / 4 page

VDS, Drain -Source Voltage (V)

Fig1. Typical Output Characteristics

Tj - Junction Temperature (°C)

Fig2.

Threshold Voltage Vs. Temperature

VGS, Gate -Source Voltage (V)

Fig3. Typical Transfer Characteristics

Tj - Junction Temperature (°C)

Fig4. Normalized On-Resistance Vs. Temperature

VSD, Source-Drain Voltage (V)

Fig5. Typical Source-Drain Diode Forward Voltage

VDS, Drain -Source Voltage (V)

Fig6. Maximum Safe Operating Area

Typical Characteristics

www.bychip.cn

UT4822G-S08-R

v3.0

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