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HAF2012 Scheda tecnica(PDF) 5 Page - Renesas Technology Corp

Il numero della parte HAF2012
Spiegazioni elettronici  Silicon N Channel MOS FET Series Power Switching
PDF  10 Pages
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAF2012 Scheda tecnica(HTML) 5 Page - Renesas Technology Corp

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HAF2012(L), HAF2012(S)
REJ03G1139-0400 Rev.4.00 Jul 13, 2007
Page 5 of 9
0.10
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
0.02
0.04
0.06
0.08
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
10 V
VGS = 4 V
ID = 20 A
ID = 20 A
5 A, 10 A
10 A
5 A
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
100
50
10
20
5
1
2
0.5
1
2
5
10
20
50
Tc = –25°C
75°C
VDS = 10 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Body-Drain Diode Reverse
Recovery Time
0.5
1
2
5
10
20
50
1000
500
200
50
100
20
10
di / dt = 50 A /
µs
VGS = 0, Ta = 25°C
0
10
20
304050
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
100
30
10
Coss
VGS = 0
f = 1 MHz
50
0
Source to Drain Voltage VSD (V)
0
10
20
30
40
Reverse Drain Current vs.
Source to Drain Voltage
0.4
0.8
1.2
1.6
2.0
0 V
VGS = 5 V
100
50
20
5
10
2
1
0.2
0.5
2
10
1
5
20
50
0.1
Drain Current
ID (A)
Switching Characteristics
tf
tr
td(off)
td(on)
Pulse Test
VGS = 5 V, VDD = 30 V
PW = 300
µs, duty ≤ 1 %



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