REJ03G1139-0400 Rev.4.00 Jul 13, 2007

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HAF2012(L), HAF2012(S)

Silicon N Channel MOS FET Series

Power Switching

REJ03G1139-0400

Rev.4.00

Jul 13, 2007

Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down

the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

Features

• Logic level operation (4 to 6 V Gate drive)

• High endurance capability against to the short circuit

• Built-in the over temperature shut-down circuit

• Latch type shut-down operation (Need 0 voltage recovery)

Outline

RENESAS Package code: PRSS0004AE-A

(Package name: LDPAK (L) )

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK (S)-(1) )

1. Gate

2. Drain

3. Source

4. Drain

1

2

3

4

1

2

3

4

D

S

G

Gate Resistor

Tempe-

rature

Sensing

Circuit

Latch

Circuit

Gate

Shut-

down

Circuit