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UT2327L-AE3-R Scheda tecnica(PDF) 3 Page - Unisonic Technologies

Il numero della parte UT2327L-AE3-R
Spiegazioni elettronici  P-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT2327L-AE3-R Scheda tecnica(HTML) 3 Page - Unisonic Technologies

  UT2327L-AE3-R Datasheet HTML 1Page - Unisonic Technologies UT2327L-AE3-R Datasheet HTML 2Page - Unisonic Technologies UT2327L-AE3-R Datasheet HTML 3Page - Unisonic Technologies UT2327L-AE3-R Datasheet HTML 4Page - Unisonic Technologies UT2327L-AE3-R Datasheet HTML 5Page - Unisonic Technologies  
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UT2327
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 5
www.unisonic.com.tw
QW-R502-108,A
TYPICAL CHARACTERISTICS
0
4
1
Drain-to-Source Voltage, VDS (V)
Fig 1. Typical Output Characteristics
6
2
13
4
0
2
3
5
5
TA = 25℃
VGS = -4V
VGS = -5V
VGS = -3V
VGS = -2V
0
4
1
Drain-to-Source Voltage, VDS (V)
Fig 2. Typical Output Characteristics
6
2
13
4
0
2
3
5
5
TA = 150℃
VGS = -4V
VGS = -5V
VGS = -3V
VGS = -2V
0
600
200
Gate-to-Source Voltage, VGS (V)
Fig 3. On-Resistance vs. Gate Voltage
10
246
0
400
800
8
ID = -2A
TA =25℃
-50
1.6
0.8
Junction Temperature, Tj (℃)
Fig 4. Normalized On-Resistance
150
050
100
0.6
1
1.4
1.8
ID = -2.8A
VGS = -5V
1.2
0.1
1
0
Source-to-Drain Voltage, VSD (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
0.3
0.5
0.7
0
10
1.1
-50
Junction Temperature, TJ (℃)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
150
050
100
0.0
0.5
1.0
1.5
TJ =25℃
TJ=150℃
0.9



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