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UT2327L-AE3-R Scheda tecnica(PDF) 4 Page - Unisonic Technologies |
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UT2327L-AE3-R Scheda tecnica(HTML) 4 Page - Unisonic Technologies |
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4 / 5 page ![]() UT2327 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 5 www.unisonic.com.tw QW-R502-108,A TYPICAL CHARACTERISTICS(Cont.) 0 3 2 Total Gate Charge, QG (nC) Fig 7. Gate Charge Characteristics 6 2 0 5 1 Drain-to-Source Voltage,VDS (V) Fig 8. Typical Capacitance Characteristics 13 37 11 0 100 1000 ID = -2.8A VDS =-6V 4 1 4 f=1.0MHz CISS COSS CRSS 59 0.1 1 0.1 Drain-to-Source Voltage,VDS (V) Fig 9. Maximum Safe Operating Area 100 1 0.01 100 0.0001 Pulse Width, t (s) Fig 10. Effective Transient Thermal Impedance 1000 0.01 1 10 0.001 0.01 0.1 1 10 10 1ms TA =25°C Single Pulse 10ms 100ms 1s DC 100 0.001 0.1 PDM T t Duty factor = t/T Peak T J = PDMx θja + Ta θja = 270 ℃/W Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform VDS 90% 10% VGS tD(ON) tR tD(OFF)tF VG -5V QG QGS QGD Q Charge |
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