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ICSSSTUB32866B Scheda tecnica(PDF) 21 Page - Integrated Circuit Systems |
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ICSSSTUB32866B Scheda tecnica(HTML) 21 Page - Integrated Circuit Systems |
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21 / 28 page ![]() 21 ICSSSTUB32866B Advance Information 1165—10/25/06 Output Buffer Characteristics Output edge rates over recommended operating free-air temperature range (See figure 7) MIN MAX dV/dt_r 1 4 V/ns dV/dt_f 1 4 V/ns dV/dt_ Δ1 1V/ns 1. Difference between dV/dt_r (rising edge rate) and dV/dt_f (falling edge rate) PARAMETER VDD = 1.8V ± 0.1V UNIT Electrical Characteristics - DC TA = 0 - 70°C; VDD = 1.8 +/-0.1V (unless otherwise stated) SYMBOL PARAMETERS VDD MIN TYP MAX UNITS VIK II = -18mA -1.2 VOH IOH = -6mA 1.7V 1.2 VOL IOL = 6mA 1.7V 0.5 II All Inputs (2) VI = VDD or GND 1.9V -5 5 µA Standby (Static) RESET# = GND 100 µA Operating (Static) (3) VI = VIH(AC) or VIL(AC), RESET# = VDD 40 mA Dynamic operating (clock only) RESET# = VDD, VI = VIH(AC) or VIL(AC), CLK and CLK# switching 50% duty cycle. 39 µA/clock MHz Dynamic Operating (per each data input) 1:1 mode 19 Dynamic Operating (per each data input) 1:2 mode 35 Data Inputs 2.5 3.5 CLK and CLK# 2 3 RESET# 2.5 1.8V RESET# = VDD, VI = VIH(AC) or VIL (AC), CLK and CLK# switching 50% duty cycle. One data input switching at half clock frequency, 50% duty cycle CONDITIONS V µA/ clock MHz/data Ci VI = VREF ±350mV IDD IO = 0 1.9V IDDD pF VICR = 1.25V, VI(PP) = 360mV VI = VDD or GND Notes: 1 - Guaranteed by design, not 100% tested in production. 2 - PAR_IN leakage current is ±17 μA due to weak pull-down resistor. Allows this device to be used as replacement for SSTUB32864B (has no parity). 3 - Static operating current will be greater than 40mA if both CLK and CLK# are pulled HIGH or LOW. |
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