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FQP3P50 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited

Il numero della parte FQP3P50
Spiegazioni elettronici  isc P-Channel MOSFET Transistor
PDF  8 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FQP3P50 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited

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isc P-Channel MOSFET Transistor
FQP3P50
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS（TJ=25℃ unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= -0.25mA
-500
--
--
V
VGS(th)
Gate Threshold Voltage
VDS=-10V; ID= -0.25mA
-3.0
--
-5.0
V
RDS(on)
Drain-Source On-Resistance
VGS= -10V; ID= -1.35A
--
--
4.9
Ω
IGSS
Gate-Source Leakage Current
VGS= ±30V; VDS = 0 V
--
--
±100
nA
IDSS
Drain-Source Leakage Current
VDS= -500V; VGS= 0V
--
--
-1
μ
A
Ciss
Input Capacitance
VGS = 0V,
VDS = -25V,
f = 1.0MHz
--
560
--
pF
Coss
Output Capacitance
--
85
--
Crss
Reverse Transfer Capacitance
--
12
--
Qg
Total Gate Charge
VDD =-400V,
ID = -3A,
VGS = -10V
--
18.5
--
nC
Qgs
Gate-Source Charge
--
7
--
Qgd
Gate-Drain Charge
--
5.2
--
td(on)
Turn-on Delay Time
VDD = -30V,
ID = -0.5A,
VGS = -10V,
RG = 25Ω
--
85
--
ns
tr
Turn-on Rise Time
--
42
--
td(off)
Turn-off Delay Time
--
176
--
tf
Turn-off Fall Time
--
80
--
Drain - Source Body Diode Characteristics
ISD
Continuous Source Current
Tc = 25 ºC
--
--
-2.7
A
ISM
Pulsed Source Current
--
--
-12
VSD
Diode Forward Voltage
ISD= 20A, VGS= 0V
--
--
-
-3.5
V
trr
Reverse Recovery Time
VGS =0V, IF = IS ,
diF/dt = 100A /μs,
VGS = 0V
--
320
--
us
Qrr
Reverse Recovery Charge
--
4.1
--
uC



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