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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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FQP3P50 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FQP3P50 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 8 page  isc P-Channel MOSFET Transistor FQP3P50 www.iscsemi.com 1 FEATURES · Drain Current -ID= -2.7A@ TC=25℃ · Drain Source Voltage -VDSS= -500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.9Ω(Max)@VGS= -10V DESCRIPTION · Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -500 V VGS Gate-Source Voltage ± 30 V ID Drain Current-Continuous -2.7 A IDM Drain Current-Single Pulsed -10.8 A PD Total Dissipation @TC=25℃ 85 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.47 ℃ /W 3 2 1 TO-220C Package |
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