2N6668 datasheet(1/4 Pages) STMICROELECTRONICS

Il numero della parte	2N6668

Spiegazioni elettronici	SILICON PNP POWER DARLINGTON TRANSISTOR

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2N6668

SILICON PNP POWER DARLINGTON TRANSISTOR

s

SGS-THOMSON PREFERRED SALESTYPE

s

PNP DARLINGTON

s

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

APPLICATIONS:

s

GENERAL PURPOSE SWITCHING

s

GENERAL PURPOSE SWITCHING AND

AMPLIFIER

INTERNAL SCHEMATIC DIAGRAM

July 1997

R1(typ) = 8 k

Ω

R2(typ) = 120

Ω

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage (IE = 0)

80

V

VCEO

Collector-Emitter Voltage (IB = 0)

80

V

VEBO

Emitter-Base Voltage (IC = 0)

5

V

IC

Collector Current

10

A

ICM

Collector Peak Current

15

A

IB

Base Current

250

mA

Ptot

Total Dissipation at Tc

≤ 25 oC65

W

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

For PNP type voltage and current values are negative.

1

2

3

TO-220

1/4

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