2N6668 datasheet(2/4 Pages) STMICROELECTRONICS

Il numero della parte	2N6668

Spiegazioni elettronici	SILICON PNP POWER DARLINGTON TRANSISTOR

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

1.92

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 80 V

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

ICEV

Collector Cut-off

Current (VEB = -1.5V)

VCE = 80 V

300

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB=0)

IC = 200 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 5 A

IB = 0.01 A

IC = 10 A

IB = 0.1 A

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 5 A

IB = 0.01 A

IC = 10 A

IB = 0.1 A

2.8

4.5

hFE

∗

DC Current Gain

IC = 5 A

VCE = 3 V

IC = 10 A

VCE = 3 V

1000

100

20000

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

For PNP type voltage and current values are negative.

2N6668

2/4

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