P2003EVG datasheet(1/5 Pages) ETC2

Il numero della parte	P2003EVG

Spiegazioni elettronici	P-Channel Logic Level Enhancement Mode Field Effect Transistor

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P-Channel Logic Level Enhancement

Mode Field Effect Transistor

P2003EVG

SOP-8

Lead-Free

NIKO-SEM

1

OCT-20-2004

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

±20

V

TC = 25 °C

-9

Continuous Drain Current

TC = 70 °C

ID

-8

Pulsed Drain Current

1

IDM

-50

A

TC = 25 °C

2.5

Power Dissipation

TC = 70 °C

PD

1.3

W

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RθJc

25

°C / W

Junction-to-Ambient

RθJA

50

°C / W

1Pulse width limited by maximum junction temperature.

2Duty cycle

≤ 1%

ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

LIMITS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX

UNIT

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = -250µA

-30

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250µA

-1

-1.5

-3

V

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

VDS = -24V, VGS = 0V

-1

Zero Gate Voltage Drain Current

IDSS

VDS = -20V, VGS = 0V, TJ = 125 °C

-10

µA

On-State Drain Current

1

ID(ON)

VDS = -5V, VGS = -10V

-50

A

VGS = -4.5V, ID = -7A

25

35

Drain-Source On-State

Resistance

1

RDS(ON)

VGS = -10V, ID = -9A

15

20

mΩ

Forward Transconductance

1

gfs

VDS = -10V, ID = -9A

24

S

4

:GATE

5,6,7,8 :DRAIN

1,2,3

:SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

-30

20mΩ

-9A

G

S

D

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