AM83135-030 datasheet(1/3 Pages) STMICROELECTRONICS

Il numero della parte	AM83135-030

Spiegazioni elettronici	RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

PDF	3 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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PRELIMINARY DATA

September 1992

S-BAND RADAR APPLICATIONS

RF & MICROWAVE TRANSISTORS

.310 x .310 2LFL (S064)

hermetically sealed

.

REFRACTORY/GOLD METALLIZATION

.

EMITTER SITE BALLASTED

.

LOW THERMAL RESISTANCE

.

INPUT/OUTPUT MATCHING

.

OVERLAY GEOMETRY

.

METAL/CERAMIC HERMETIC PACKAGE

.

POUT

= 30 W MIN. WITH 5.5 dB GAIN

DESCRIPTION

The AM83135-030 device is a high power silicon

bipolar NPN transistor specifically designed for S-

Band radar pulsed output and driver applications.

This device is characterized at 100

µsec pulse

width and 10% duty cycle, but is capable of oper-

ation over a range of pulse widths, duty cycles,

and temperatures, and withstand a 3:1 output

VSWR with a + 1 dB input overdrive. Low RF

thermal resistance, refractory/gold metallization,

and computerized automatic wire bonding tech-

niques ensure high reliability and product consist-

ency (including phase characteristics).

The AM83135-030 is supplied in the IMPAC™ Her-

metic M etal/Ceramic package with internal

Input/Output impedance matching circuitry, and is

intended for military and other high reliability ap-

plications.

PIN CONNECTION

BRANDING

AM83135-30

ORDER CODE

AM83135-030

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

PDISS

Power Dissipation*

(TC

≤ 50˚C)

133

W

IC

Device Current*

6.0

A

VCC

Collector-Supply Voltage*

46

V

TJ

Junction Temperature (Pulsed RF Operation)

250

°C

TSTG

Storage Temperature

− 65 to +200

°C

RTH(j-c)

Junction-Case Thermal Resistance*

1.5

°C/W

*Applies only to rated RF amplifier operation

AM83135-030

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

1/3

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