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STF7N60M2 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STF7N60M2 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc N-Channel MOSFET Transistor STF7N60M2 www.iscsemi.com 1 FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 0.95Ω(Max)@VGS= 10V APPLICATION · Motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ± 25 V ID Drain Current-Continuous 5.0 A IDM Drain Current-Single Pulse 20 A PD Total Dissipation @TC=25℃ 20 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal Resistance, Junction to Case 6.25 ℃ /W 12 3 TO-220F package Pin 1.Gate 2.Drain 3.Source |
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