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CDX4HCT03 Scheda tecnica(PDF) 11 Page - Texas Instruments

Il numero della parte CDX4HCT03
Spiegazioni elettronici  CDx4HCT03 Quadruple 2-Input NAND Gates with Open-Drain Outputs
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for a default state of LOW. The resistor size is limited by drive current of the controller, leakage current into the
CD74HCT03, as specified in the Section 6.4, and the desired input transition rate. A 10-kΩ resistor value is often
used due to these factors.
Refer to the Section 8.3 for additional information regarding the inputs for this device.
9.2.1.3 Output Considerations
The ground voltage is used to produce the output LOW voltage. Sinking current into the output will increase the
output voltage as specified by the VOL specification in the Section 6.4. The plot in provides a typical relationship
between output voltage and current for this device.
Open-drain outputs can be directly connected together to produce a wired-AND. This is possible because the
outputs cannot source current, and thus can never be in bus-contention.
Unused outputs can be left floating. Do not connect outputs directly to VCC or ground.
Refer to Section 8.3 for additional information regarding the outputs for this device.
9.2.2 Detailed Design Procedure
1. Add a decoupling capacitor from VCC to GND. The capacitor needs to be placed physically close to the
device and electrically close to both the VCC and GND pins. An example layout is shown in the Section 11.
2. Ensure the capacitive load at the output is ≤ 70 pF. This is not a hard limit, however it will ensure optimal
performance. This can be accomplished by providing short, appropriately sized traces from the CD74HCT03
to the receiving device.
3. Ensure the resistive load at the output is larger than (VCC / IO(max)) Ω. This will ensure that the maximum
output current from the Section 6.1 is not violated. Most CMOS inputs have a resistive load measured in
megaohms; much larger than the minimum calculated above.
4. Thermal issues are rarely a concern for logic gates, however the power consumption and thermal increase
can be calculated using the steps provided in the application report, CMOS Power Consumption and Cpd
Calculation
9.2.3 Application Curves
PG 2
Output
PG 1
Figure 9-2. Typical application timing diagram
www.ti.com
CD74HCT03, CD54HCT03
SCHS414 – JUNE 2020
Copyright © 2021 Texas Instruments Incorporated
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