Package Marking and Ordering Information

Part Number

Top Mark

Package

Reel Size

Tape Width

Quantity

FQB11N40C

FQB11N40CTM

D2-PAK

330 mm

24 mm

800 units

©2004 Fairchild Semiconductor Corporation

FQB11N40C Rev. C0

www.fairchildsemi.com

2



1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. L = 5.7 mH, IAS = 10.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25oC.

3. ISD ≤ 10.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.

4. Essentially independent of operating temperature.

Packing Method

Tape and Reel

Electrical Characteristics T

C = 25

oC unless otherwise noted.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

400

--

--

V

∆BVDSS

/

∆TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 µA, Referenced to 25°C

--

0.54

--

V/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 400 V, VGS = 0 V

--

--

1

µA

VDS = 320 V, TC = 125°C

--

--

10

µA

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

--

--

100

nA

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

--

--

-100

nA

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

2.0

--

4.0

V

RDS(on)

Static Drain-Source

On-Resistance

VGS = 10 V, ID = 5.25 A

--

0.5

0.53

Ω

gFS

Forward Transconductance

VDS = 40 V, ID = 5.25 A

--

7.1

--

S

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

--

840

1090

pF

Coss

Output Capacitance

--

250

325

pF

Crss

Reverse Transfer Capacitance

--

85

110

pF

Switching Characteristics

td(on)

Turn-On Delay Time

VDD = 200 V, ID = 10.5 A,

RG = 25 Ω

(Note 4)

--

14

40

ns

tr

Turn-On Rise Time

--

89

190

ns

td(off)

Turn-Off Delay Time

--

81

170

ns

tf

Turn-Off Fall Time

--

81

170

ns

Qg

Total Gate Charge

VDS = 320 V, ID = 10.5 A,

VGS = 10 V

(Note 4)

--

28

35

nC

Qgs

Gate-Source Charge

--

4

--

nC

Qgd

Gate-Drain Charge

--

15

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

--

10.5

A

ISM

Maximum Pulsed Drain-Source Diode Forward Current

--

--

42

A

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 10.5 A

--

--

1.4

V

trr

Reverse Recovery Time

VGS = 0 V, IS = 10.5 A,

dIF / dt = 100 A/µs

--

290

--

ns

Qrr

Reverse Recovery Charge

--

2.4

--

µC