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MB85RC256TY Scheda tecnica(PDF) 1 Page - RAMXEED LIMITED |
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MB85RC256TY Scheda tecnica(HTML) 1 Page - RAMXEED LIMITED |
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1 / 39 page  Copyright 2024 RAMXEED LIMITED Fujitsu Semiconductor Memory Solutions Limited has changed its name to RAMXEED Limited. RAMXEED Limited will continue to offer and support existing products while maintaining Fujitsu's part number unchanged. Memory FeRAM 256K (32 K 8) Bit I2C MB85RC256TY(AEC-Q100 Compliant) DESCRIPTION The MB85RC256TY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256TY is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC256TY has improved to be at least 1013 cycles, significantly outperforming other nonvolatile memory products in the number. The MB85RC256TY does not need a polling sequence after writing to the memory such as the case of Flash memory or E2PROM. FEATURES • Bit configuration : 32,768 words 8 bits • Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA). • Operating frequency : 3.4 MHz (Max @HIGH SPEED MODE) 1 MHz (Max @FAST MODE PLUS) • Read/write endurance : 1013 times / byte • Data retention : 70.4 years ( 85 C), 19.1 years ( 105 C), 5.9 years ( 125 C) • Operating power supply voltage: 1.8 V to 3.6 V • Low-power consumption : Operating power supply current 0.23 mA (Typ @3.4 MHz) 0.4 mA (Max @3.4 MHz) Standby current 14 A (Typ) Sleep current 0.24 A (Typ) • Operation ambient temperature range : 40 C to 125 C • Package : 8-pin plastic SOP (150mil) 8-pin plastic DFN (5mm 6mm) RoHS compliant DS501-00077-1v1-E |
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