MB85RC256TY(AEC-Q100 Compliant)

DS501-00077-1v1-E

17



POWER ON/OFF SEQUENCE

When applying relatively short term VDD pulse whose peak is more than 1.7V, it is required to set falling time, tf

more than 0.4ms/V. (In case VDD rises over 1.7V and falls just after that, if this term is short, device may lose

its function.)

.

If the device does not operate within the specified conditions of read cycle, write cycle or power on/off

sequence, memory data can not be guaranteed.



FeRAM CHARACTERISTICS

*1 : Total number of reading and writing defines the minimum value of endurance, as an FeRAM memory

operates with destructive readout mechanism.

*2 : Minimum values define retention time of the first reading/writing data right after shipment.

*3: Under evaluation for more than 5.9 years(+125 C).

These values are calculated by qualification results.

Parameter

Symbol

Value

Unit

Min

Max

SDA, SCL level hold time during power down

tpd

85



ns

SDA, SCL level hold time during power up

tpu

450





s

Power supply rising time

tr

0.05



ms/V

Power supply falling time

tf

0.1



ms/V

Internal regulator recovery time

tREC



450



s

Item

Min

Max

Unit

Parameter

Read/Write Endurance*1

1013



Times/byte Operation Ambient Temperature TA   125 C

Data Retention*2

5.9*3



Years

Operation Ambient Temperature TA   125 C

19.1



Operation Ambient Temperature TA   105 C

70.4



Operation Ambient Temperature TA   85 C

0 V

SDA, SCL > VDD × 0.8 *

SDA, SCL > VDD × 0.8 *

tpd

tpu

tr

tf

VIL (Max)

VIH (Min)

VDD (Min)

VDD

SDA, SCL : Don't care

SDA, SCL

SDA, SCL

0 V

VIL (Max)

VIH (Min)

VDD (Min)

VDD

* : SDA, SCL (Max) < VDD  0.5 V