MB85RC256V

14

DS501-00017-11v2-E



POWER ON/OFF SEQUENCE

If the device does not operate within the specified conditions of read cycle, write cycle or power on/off

sequence, memory data can not be guaranteed.



FeRAM CHARACTERISTICS

*1 : Total number of reading and writing defines the minimum value of endurance, as an FeRAM memory

operates with destructive readout mechanism.

*2 : Minimum values define retention time of the first reading/writing data right after shipment, and these values

are calculated by qualification results.

Parameter

Symbol

Value

Unit

Condition

Min

Max

SDA, SCL level hold time during

power down

tpd

85



ns



SDA, SCL level hold time during

power up

tpu

85



ns

VDD  5.0V  0.5V Operation

0.5



ms

VDD  3.3V  0.3V Operation

Power supply rising time

tr

0.5

50

ms

VDD  5.0V  0.5V Operation

0.005

50

VDD  3.3V  0.3V Operation

Power supply falling time

tf

0.5

50

ms



Item

Min

Max

Unit

Parameter

Read/Write Endurance*1

1012



Times/byte Operation Ambient Temperature TA   85 C

Data Retention*2

10



Years

Operation Ambient Temperature TA   85 C

95



Operation Ambient Temperature TA   55 C



200



Operation Ambient Temperature TA   35 C

0 V

SDA, SCL > VDD × 0.8 *

SDA, SCL > VDD × 0.8 *

tpd

tpu

tr

tf

VIL (Max)

1.0 V

VIH (Min)

2.7 V

VDD

SDA, SCL : Don't care

SDA, SCL

SDA, SCL

0 V

VIL (Max)

1.0 V

VIH (Min)

2.7 V

VDD

* : SDA, SCL (Max) < VDD  0.5 V