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M45PE10-VMP6TP Scheda tecnica(PDF) 21 Page - Numonyx B.V

Il numero della parte M45PE10-VMP6TP
Spiegazioni elettronici  1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface
PDF  47 Pages
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Produttore elettronici  NUMONYX [Numonyx B.V]
Homepage  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

M45PE10-VMP6TP Scheda tecnica(HTML) 21 Page - Numonyx B.V

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M45PE10
Instructions
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Figure 9.
Read status register (RDSR) instruction sequence and data-out sequence
6.5
Read data bytes (READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the read
data bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being
latched-in during the rising edge of Serial Clock (C). Then the memory contents, at that
address, is shifted out on serial data output (Q), each bit being shifted out, at a maximum
frequency fR, during the falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 10.
The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out. The whole memory can,
therefore, be read with a single read data bytes (READ) instruction. When the highest
address is reached, the address counter rolls over to 000000h, allowing the read sequence
to be continued indefinitely.
The read data bytes (READ) instruction is terminated by driving Chip Select (S) High. Chip
select (S) can be driven High at any time during data output. Any read data bytes (READ)
instruction, while an erase, program or write cycle is in progress, is rejected without having
any effects on the cycle that is in progress.
C
D
S
2
1
3456789 10 11 12 13 14 15
Instruction
0
AI02031E
Q
7
6543210
Status Register Out
High Impedance
MSB
7
6543210
Status Register Out
MSB
7



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