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M58LR128KB855 Scheda tecnica(PDF) 54 Page - Numonyx B.V

Il numero della parte M58LR128KB855
Spiegazioni elettronici  128 or 256 Mbit (횞16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
PDF  110 Pages
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Produttore elettronici  NUMONYX [Numonyx B.V]
Homepage  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

M58LR128KB855 Scheda tecnica(HTML) 54 Page - Numonyx B.V

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Program and erase times and endurance cycles
M58LR128KT, M58LR128KB, M58LR256KT,
54/111
10
Program and erase times and endurance cycles
The program and erase times and the number of program/ erase cycles per block are shown
in Table 18. Exact erase times may change depending on the memory array condition. The
best case is when all the bits in the block are at ‘0’ (pre-programmed). The worst case is
when all the bits in the block are at ‘1’ (not preprogrammed). Usually, the system overhead is
negligible with respect to the erase time. In the M58LRxxxKT/B the maximum number of
program/erase cycles depends on the VPP voltage supply used.
Table 18.
Program/erase times and endurance cycles(1) (2)
Parameter
Condition
Min
Typ
Typical after
100kW/E
cycles
Max
Unit
Erase
Parameter block (16 Kword)
0.4
1
2.5
s
Main block (64
Kword)
Preprogrammed
1.2
3
4
s
Not preprogrammed
1.5
4
s
Program(3)
Single Word
Word program
12
180
µs
Buffer program
12
180
µs
Buffer (32 words) (buffer program)
384
µs
Main block (64 Kword)
768
ms
Suspend latency
Program
20
25
µs
Erase
20
25
µs
Program/erase cycles
(per block)
Main blocks
100 000
cycles
Parameter blocks
100 000
cycles



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