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M58LR128KB855 Scheda tecnica(PDF) 55 Page - Numonyx B.V

Il numero della parte M58LR128KB855
Spiegazioni elettronici  128 or 256 Mbit (횞16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
PDF  110 Pages
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Produttore elettronici  NUMONYX [Numonyx B.V]
Homepage  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

M58LR128KB855 Scheda tecnica(HTML) 55 Page - Numonyx B.V

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M58LR128KT, M58LR128KB, M58LR256KT, M58LR256KB
Program and erase times and endur-
55/111
Erase
Parameter block (16 Kword)
0.4
2.5
s
Main block (64 Kword)
1
4
s
Program(3)
Single word
Word program
10
170
µs
Buffer enhanced
factory program(4)
2.5
µs
Buffer (32 words)
Buffer program
80
µs
Buffer enhanced
factory program
80
µs
Main block (64
Kwords)
Buffer program
160
ms
Buffer enhanced
factory program
160
ms
Bank (8 Mbits)
Buffer program
1.28
s
Buffer enhanced
factory program
1.28
s
Program/erase cycles
(per block)
Main blocks
1000 cycles
Parameter blocks
2500 cycles
Blank Check
Main blocks
16
ms
Parameter blocks
4
ms
1.
TA = –25 to 85 °C; VDD = 1.7 V to 2 V; VDDQ = 1.7 V to 2 V.
2.
Values are liable to change with the external system-level overhead (command sequence and Status Register polling
execution).
3.
Excludes the time needed to execute the command sequence.
4.
This is an average value on the entire device.
Table 18.
Program/erase times and endurance cycles(1) (2) (continued)
Parameter
Condition
Min
Typ
Typical after
100kW/E
cycles
Max
Unit



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