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ST7LITEU09 Scheda tecnica(PDF) 86 Page - STMicroelectronics |
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ST7LITEU09 Scheda tecnica(HTML) 86 Page - STMicroelectronics |
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86 / 115 page ![]() ST7LITEU05 ST7LITEU09 86/115 13.6 MEMORY CHARACTERISTICS TA = -40°C to 125°C, unless otherwise specified 13.6.1 RAM and Hardware Registers 13.6.2 FLASH Program Memory 13.6.3 EEPROM Data Memory Notes: 1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg- isters (only in HALT mode). Guaranteed by construction, not tested in production. 2. Up to 32 bytes can be programmed at a time. 3. The data retention time increases when TA decreases. 4. Data based on reliability test results and monitored in production. 5. Data based on characterization results, not tested in production. 6. Guaranteed by Design. Not tested in production. Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode 1) HALT mode (or RESET) 1.6 V Symbol Parameter Conditions Min Typ Max Unit VDD Operating voltage for Flash write/erase 2.4 5.5 V tprog Programming time for 1~32 bytes 2) TA=−40 to +125 °C 5 10 ms Programming time for 2 KBytes TA=+25 °C 0.32 0.64 s tRET Data retention 4) TA=+55 °C 3) 20 years NRW Write erase cycles TA=+25 °C 10k cycles IDD Supply current 6) Read / Write / Erase modes fCPU = 8 MHz, VDD = 5.5 V 2.6 mA No Read/No Write Mode 100 µA Power down mode / HALT 0 0.1 µA Symbol Parameter Conditions Min Typ Max Unit VDD Operating voltage for EEPROM write/erase Refer to operating range of VDD with TA, section 13.3.1 on page 76 2.4 5.5 V tprog Programming time for 1~32 bytes TA=−40 to +125 °C 5 10 ms tret Data retention 4) TA=+55 °C 3) 20 years NRW Write erase cycles TA=+25 °C 300k cycles 1 |
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