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AP13P20D Scheda tecnica(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP13P20D Scheda tecnica(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP13P20D 200V P-Channel Enhancement Mode MOSFET AP13P20P RVE1.1 永源微電子科技有限公司 Description The AP13P20D is silicon P-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = -200V ID =13A RDS(ON) < 420mΩ @ VGS=10V (Type:360mΩ) Application Load Switch PWM Application Power management Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP13P20D TO-252-3L AP13P20D XXX YYYY 2500 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -200 V VGS Gate-Source Voltage ± 20 V ID@TA=25 ℃ Continuous Drain Current -13 A ID@TA=100 ℃ Continuous Drain Current -7.2 A IDM Pulsed Drain Current a -52 A EAS Single Pulse Avalanche Energy b 750 mJ IAR Repetitive Avalanche Current a -11 A PD Maximum Power Dissipation 125 W TJ, Tstg Operating Junction and Storage Temperature Range -55 to +150 °C RthJA Maximum Junction-to-Ambient 62 °C/W RthJC Maximum Junction-to-Case (Drain) 1.0 °C/W |
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