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AP13P20D Scheda tecnica(PDF) 2 Page - A POWER MICROELECTRONICS

Il numero della parte AP13P20D
Spiegazioni elettronici  200V P-Channel Enhancement Mode MOSFET
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Produttore elettronici  APME [A POWER MICROELECTRONICS]
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AP13P20D
200V P-Channel Enhancement Mode MOSFET
AP13P20P RVE1.1
永源微電子科技有限公司
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VDS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250μA
-200
-230
-
V
VGS(th)
Gate-Source Threshold Voltage
VDS=VGS, ID=-250μA
-2.0
-3.5
-4.0
V
IGSS
Gate-Source Leakage
VGS = ± 20 V
-
-
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS=-200V, VGS=0V
-
-
-100
μA
IDSS
VDS=-160V, VGS=0V, TJ=125°C
-
-
-500
RDS(on)
Drain-Source On-State Resistance
VGS=-10 V ID=-5.5A
-
340
420
mΩ
gfs
Forward Transconductance
VDS=-50 V, ID=-6.6A
4.1
-
-
S
Ciss
Input Capacitance
VGS=0V,
VDS=-25 V, f=1.0MHz,
-
1200
-
pF
Coss
Output Capacitance
-
370
-
Crss
Reverse Transfer Capacitance
-
81
-
Qg
Total Gate Charge
VGS=-10V ID=-11A, VDS=-160V,
-
-
44
nC
Qgs
Gate-Source Charge
-
-
7.1
Qgd
Gate-Drain Charge
-
-
27
td(on)
Turn-On Delay Time
VDD=-100V, ID=-11A Rg=9.1Ω
-
14
-
ns
tr
Rise Time
-
43
-
td(off)
Turn-Off Delay Time
-
39
-
tf
Fall Time
-
38
-
Rg
Gate Input Resistance
f=1MHz, open drain
0.3
-
1.7
Ω
VSD
Body Diode Voltage
TJ=25 °C, IS=-11A, VGS=0V
-
-
-5
V
trr
Body Diode Reverse Recovery Time
TJ=25°C, IF=-11A,
dI/dt=100A/μs
-
250
300
ns
Qrr
Body Diode Reverse Recovery Charge
-
2.9
3.6
μC
IS
Continuous Source-Drain Diode Current Pulsed Diode Forward Current a
-
-
-11
A
ISM
-
-
-44
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS
and LD)
Note :
1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2、The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3、The EAS data shows Max. rating . The test condition is TJ = 25°C, L=0.3mH, RG=25Ω, VDD=50V,VGS=10V
4、The ISD=40A,di/dt≤100A/us, VDD≤BVDS, Start TJ=25
℃
5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.



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