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AP13P20D Scheda tecnica(PDF) 2 Page - A POWER MICROELECTRONICS |
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AP13P20D Scheda tecnica(HTML) 2 Page - A POWER MICROELECTRONICS |
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2 / 7 page ![]() AP13P20D 200V P-Channel Enhancement Mode MOSFET AP13P20P RVE1.1 永源微電子科技有限公司 Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit VDS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -200 -230 - V VGS(th) Gate-Source Threshold Voltage VDS=VGS, ID=-250μA -2.0 -3.5 -4.0 V IGSS Gate-Source Leakage VGS = ± 20 V - - ±100 nA IDSS Zero Gate Voltage Drain Current VDS=-200V, VGS=0V - - -100 μA IDSS VDS=-160V, VGS=0V, TJ=125°C - - -500 RDS(on) Drain-Source On-State Resistance VGS=-10 V ID=-5.5A - 340 420 mΩ gfs Forward Transconductance VDS=-50 V, ID=-6.6A 4.1 - - S Ciss Input Capacitance VGS=0V, VDS=-25 V, f=1.0MHz, - 1200 - pF Coss Output Capacitance - 370 - Crss Reverse Transfer Capacitance - 81 - Qg Total Gate Charge VGS=-10V ID=-11A, VDS=-160V, - - 44 nC Qgs Gate-Source Charge - - 7.1 Qgd Gate-Drain Charge - - 27 td(on) Turn-On Delay Time VDD=-100V, ID=-11A Rg=9.1Ω - 14 - ns tr Rise Time - 43 - td(off) Turn-Off Delay Time - 39 - tf Fall Time - 38 - Rg Gate Input Resistance f=1MHz, open drain 0.3 - 1.7 Ω VSD Body Diode Voltage TJ=25 °C, IS=-11A, VGS=0V - - -5 V trr Body Diode Reverse Recovery Time TJ=25°C, IF=-11A, dI/dt=100A/μs - 250 300 ns Qrr Body Diode Reverse Recovery Charge - 2.9 3.6 μC IS Continuous Source-Drain Diode Current Pulsed Diode Forward Current a - - -11 A ISM - - -44 ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is TJ = 25°C, L=0.3mH, RG=25Ω, VDD=50V,VGS=10V 4、The ISD=40A,di/dt≤100A/us, VDD≤BVDS, Start TJ=25 ℃ 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. |
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