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AP13P20P Scheda tecnica(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP13P20P Scheda tecnica(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 8 page ![]() AP13P20PIT -200V P-Channel Enhancement Mode MOSFET AP13P20P/T RVE1.0 永源微電子科技有限公司 V Description The AP13P20P/T is silicon P-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features DS =-200V ID =13A RDS(ON) < 420mΩ @ VGS=10V (Type:340mΩ) Application Uninterruptible Power Supply(UPS) Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP13P20P TO-220-3L AP13P20P XXX YYYY 1000 AP13P20T AP13P20T TO-263-3L XXX YYYY 800 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -200 V VGS Gate-Source Voltage ± 20 V ID@TC= 25°C Continuous Drain Current -13 A ID@TC=100°C Continuous Drain Current -7.2 A IDM Pulsed Drain Current a -52 A EAS Single Pulse Avalanche Energy b 750 mJ IAR Repetitive Avalanche Current a -11 A EAR Repetitive Avalanche Energy a 13 mJ PDTC=25°C Maximum Power Dissipation 125 W TJ, Tstg Operating Junction and Storage Temperature Range -55 to +150 °C RthJA Maximum Junction-to-Ambient 62 °C/W RthJC Maximum Junction-to-Case (Drain) 1.0 °C/W |
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