AP13P20PIT

-200V P-Channel Enhancement Mode MOSFET

AP13P20P/T RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VDS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = -250 μA

-200

-

-

V

VGS(th)

Gate-Source Threshold Voltage

VDS = VGS, ID = -250 μA

-2.0

-

-4.0

V

IGSS

Gate-Source Leakage

VGS = ± 20 V

-

-

± 100

nA

IDSS

Zero Gate Voltage Drain Current

VDS = -200 V, VGS = 0 V

-

-

-100

μA

RDS(on)

Drain-Source On-State Resistance

VGS = -10 V ID = -5.5 A b

-

340

420

mΩ

gfs

Forward Transconductance

VDS = -50 V, ID = -6.6 A b

4.1

-

-

S

Ciss

Input Capacitance

VGS = 0 V,

VDS=-25 V, f=1.0 MHz,

-

1200

-

pF

Coss

Output Capacitance

-

370

-

pF

Crss

Reverse Transfer Capacitance

-

81

-

pF

Qg

Total Gate Charge

VGS=-10V ID=-11 A

VDS=-160V

-

-

44

nC

Qgs

Gate-Source Charge

-

-

7.1

nC

Qgd

Gate-Drain Charge

-

-

27

nC

td(on)

Turn-On Delay Time

VDD=-100V, ID=-11A Rg=9.1Ω

-

14

-

ns

tr

Rise Time

-

43

-

ns

td(off)

Turn-Off Delay Time

-

39

-

ns

tf

Fall Time

-

38

-

ns

Rg

Gate Input Resistance

f=1 MHz, open drain

0.3

-

1.7

Ω

IS

Continuous Source-Drain Diode Current

-

-

-13

A

ISM

Pulsed Diode Forward Current

-

-

-44

VSD

Body Diode Voltage

TJ=25 °C, IS= -11A, VGS=0 Vb

-

-

-5

V

trr

Body Diode Reverse Recovery Time

TJ=25 °C, IF=-11A,

dI/dt=100 A/μs b

-

250

300

ns

Qrr

Body Diode Reverse Recovery Charge

-

2.9

3.6

μC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The EAS data shows Max. rating . L=1mH IAS=-11A, VDD=-160V, RG=25Ω, Starting TJ = 25 ºC

3

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.