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AP110N04D Scheda tecnica(PDF) 1 Page - A POWER MICROELECTRONICS

Il numero della parte AP110N04D
Spiegazioni elettronici  40V N-Channel Enhancement Mode MOSFET
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AP110N04D
40V N-Channel Enhancement Mode MOSFET
AP110N04D RVE1. 0
永源微電子科技有限公司
Description
The AP110N04D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 40V ID =110A
RDS(ON) < 4.3mΩ @ VGS=10V (Type：3.5mΩ)
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP110N04D
TO-252-3L
AP110N04D XXX YYYY
2500
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
110
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
78
A
IDM
Pulsed Drain Current2
440
A
EAS
Single Pulse Avalanche Energy3
195
mJ
IAS
Avalanche Current
42
A
PD@TC=25℃
Total Power Dissipation4
108
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62
℃
/W
RθJC
Thermal Resistance Junction-Case1
1.4
℃
/W


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