AP110N04D

40V N-Channel Enhancement Mode MOSFET

AP110N04D RVE1. 0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

40

44

---

V

△

BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25℃ , ID=1mA

---

0.052

---

V/℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=30A

---

3.5

4.3

mΩ

RDS(ON)

Static Drain-Source On-Resistance2

VGS=4.5V , ID=20A

---

5.4

7.5

mΩ

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

1.6

2.5

V

△

VGS(th)

VGS(th) Temperature Coefficient

---

-5.76

---

mV/℃

IDSS

Drain-Source Leakage Current

VDS=40V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=40V , VGS=0V , TJ=55℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=5V , ID=30A

---

42

---

S

Qg

Total Gate Charge (4.5V)

VDS=48V , VGS=10V , ID=30A

---

65

---

nC

Qgs

Gate-Source Charge

---

12.5

---

Qgd

Gate-Drain Charge

---

15

---

Td(on)

Turn-On Delay Time

VDD=30V , VGS=10V , RG=4.7Ω,

ID=15A

---

12

---

ns

Tr

Rise Time

---

16

---

Td(off)

Turn-Off Delay Time

---

39

---

Tf

Fall Time

---

15

---

Ciss

Input Capacitance

VDS=30V , VGS=0V , f=1MHz

---

5595

---

pF

Coss

Output Capacitance

---

411

---

Crss

Reverse Transfer Capacitance

---

340

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

110

A

ISM

Pulsed Source Current2,5

---

---

440

A

VSD

Diode Forward Voltage2

VGS=0V , IS=30A , TJ=25℃

---

---

1.2

V

trr

Reverse Recovery Time

IF=30A , dI/dt=100A/µs ,

TJ=25℃

---

22

---

nS

Qrr

Reverse Recovery Charge

---

11

---

nC

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . TJ=25℃, VDD=32V, VG=10V, RG=25Ω, L=0.1mH, IAS =42A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.