STB95NF03 datasheet(2/9 Pages) STMICROELECTRONICS

Il numero della parte	STB95NF03

Spiegazioni elettronici	N-CHANNEL 30V - 0.0065 ohm - 95A D²PAK STripFET™ II POWER MOSFET

PDF	9 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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STB95NF03

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THERMAL DATA

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF

ON (*)

DYNAMIC

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Maximum Lead Temperature For Soldering Purpose

Max

62.5

300

°C/W

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA

VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20 V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 250 µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V

ID = 45 A

0.0065

0.0070

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (*)

Forward Transconductance

VDS = 15 V

ID =45 A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V f = 1 MHz VGS = 0

2450

880

170

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