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STB95NF03 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STB95NF03 Scheda tecnica(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() 3/9 STB95NF03 SWITCHING ON (*) SWITCHING OFF(*) SOURCE DRAIN DIODE(*) (*) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ( •) Pulse width limited by Tjmax Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD = 15 V ID = 47.5 A RG = 4.7 Ω VGS = 10 V 20 195 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=15V ID=95A VGS=10V 59 18 21 70 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 20 V ID = 47.5 A RG = 4.7Ω, VGS = 10 V 35 35 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 95 320 A A VSD (*) Forward On Voltage ISD = 95 A VGS = 0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 95 A di/dt = 100A/µs VDD = 20 V Tj = 150°C (see test circuit, Figure 5) 60 120 4 ns nC A Thermal Impedance ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area |
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