STP40NF03L datasheet(1/8 Pages) STMICROELECTRONICS

Il numero della parte	STP40NF03L

Spiegazioni elettronici	N - CHANNEL 30V - 0.020 ohm - 40A TO-220 STripFET POWER MOSFET

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STP40NF03L

N - CHANNEL 30V - 0.020

Ω - 40A TO-220

STripFET

™ POWER MOSFET

s

TYPICAL RDS(on) = 0.020

Ω

s

LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics

unique

”Single

Feature

Size

™” strip-based process. The resulting

transistor shows extremely high packing density

for

low

on-resistance,

rugged

avalanche

characteristics and less critical alignment steps

therefore

a

remarkable

manufacturing

reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

®

INTERNAL SCHEMATIC DIAGRAM

October 1999

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

30

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)30

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC40

A

ID

Drain Current (continuous) at Tc = 100

oC28

A

IDM(

•)

Drain Current (pulsed)

160

A

Ptot

T otal Dissipation at Tc =25

oC70

W

Derating Factor

0.46

W /

oC

EAS (1)

Single Pulse Avalanche Energy

250

m/ J

Tstg

Storage Temperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

( 1

) starting Tj =25 oC, ID =20A , VDD = 15V

TYPE

VDSS

RDS(o n)

ID

STP40NF03L

30 V

< 0.022

Ω

40 A

1

2

3

TO-220

1/8

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