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STP40NF03L Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STP40NF03L
Spiegazioni elettronici  N - CHANNEL 30V - 0.020 ohm - 40A TO-220 STripFET POWER MOSFET
PDF  8 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP40NF03L Scheda tecnica(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay T ime
Rise Time
VDD =15 V
ID =20 A
RG =4.7
Ω
VGS =4.5 V
(Resistive Load, see fig. 3)
35
205
ns
ns
Qg
Q gs
Qgd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD =24 V ID =40 A VGS =5 V
18
7
8
23
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay T ime
Fall T ime
VDD =15 V
ID =20 A
RG =4.7
Ω
VGS =4.5 V
(Resistive Load, see fig. 3)
90
240
ns
ns
td(off)
tf
tc
Off -volt age Rise T ime
Fall T ime
Cross-over Time
Vclamp = 24 V
ID =20 A
RG =4.7
Ω
VGS =4.5 V
(Induct ive Load, see fig. 5)
150
155
340
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
40
160
A
A
VSD (
∗)Forward On Voltage
ISD =40 A
VGS =0
1. 5
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 40 A
di/dt = 100 A/
µs
VDD =15 V
Tj =150
oC
(see t est circuit, f ig. 5)
65
72
2
ns
nC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STP40NF03L
3/8



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