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STP55NF06LFP Scheda tecnica(PDF) 2 Page - STMicroelectronics

Il numero della parte STP55NF06LFP
Spiegazioni elettronici  N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET™ I POWER MOSFET
PDF  12 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP55NF06LFP Scheda tecnica(HTML) 2 Page - STMicroelectronics

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STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
TO-220
D2PAK
I2PAK
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
1.58
5.0
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
60
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
1µA
VDS = Max Rating, TC = 125 °C
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1
1.7
V
RDS(on)
Static Drain-source On
Resistance
VGS = 5 V, ID = 27.5 A
0.016
0.020
Ω
VGS = 10V, ID = 27.5 A
0.014
0.018
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS = 15V , ID = 27.5 A
30
S
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
1700
pF
Coss
Output Capacitance
300
pF
Crss
Reverse Transfer
Capacitance
105
pF



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