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STP55NF06LFP Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STP55NF06LFP
Spiegazioni elettronici  N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET™ I POWER MOSFET
PDF  12 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP55NF06LFP Scheda tecnica(HTML) 3 Page - STMicroelectronics

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STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 30 V, ID = 27.5A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
20
ns
tr
Rise Time
100
ns
Qg
Qgs
Qgs
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 48 V, ID = 55 A,
VGS = 4.5V
27
7
10
37
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off-Delay Time
Fall Time
VDD = 30 V, ID = 27.5 A,
RG =4.7Ω, VGS = 4.5V
(see test circuit, Figure 5)
40
20
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
55
A
ISDM (2)
Source-drain Current (pulsed)
220
A
VSD (1)
Forward On Voltage
ISD = 55 A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 55A, di/dt = 100A/µs,
VDD = 30 V, Tj = 150°C
(see test circuit, Figure 5)
80
200
5
ns
nC
A
ThermalImpedanceforTO-220/D2PAK/I2PAK
Safe Operating Area For TO-220/D2PAK/I2PAK



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