STS5NS150 datasheet(1/8 Pages) STMICROELECTRONICS

Il numero della parte	STS5NS150

Spiegazioni elettronici	N-CHANNEL 150V - 0.075 ohm - 5A SO-8 LOW GATE CHARGE STripFET??II POWER MOSFET

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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May 2002

.

STS5NS150

N-CHANNEL 150V - 0.075

Ω - 5A SO-8

LOW GATE CHARGE STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.075 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

TYPE

VDSS

RDS(on)

ID

STS5NS150

150 V

<0.1

Ω

5 A

SO-8

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

150

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

150

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuous) at TC = 25°C

5A

ID

Drain Current (continuous) at TC = 100°C

3A

IDM(•)

Drain Current (pulsed)

20

A

Ptot

Total Dissipation at TC = 25°C

2.5

W

Derating Factor

0.02

W/°C

Tstg

Storage Temperature

-55 to 150

°C

Tj

Operating Junction Temperature

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