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STS5NS150 Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STS5NS150
Spiegazioni elettronici  N-CHANNEL 150V - 0.075 ohm - 5A SO-8 LOW GATE CHARGE STripFET??II POWER MOSFET
PDF  8 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STS5NS150 Scheda tecnica(HTML) 3 Page - STMicroelectronics

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STS5NS150
Safe Operating Area
Thermal Impedance
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 75 V
ID = 2.5 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 1)
12
2.8
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 120V ID= 5A VGS= 10V
(see test circuit, Figure 2)
65
5.5
2.7
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 75 V
ID = 2.5 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 1)
50
12
ns
ns
tr(Voff)
tf
tc
Turn-off Delay Time
Fall Time
Cross-over Time
Vclamp = 120 V
ID = 5 A
RG = 4.7Ω,
VGS = 10 V
(Inductive Load, Figure 5)
11
17
36
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
5
20
A
A
VSD (*)
Forward On Voltage
ISD = 5 A
VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5 A
di/dt = 100A/µs
VDD = 30 V
Tj = 150°C
(see test circuit, Figure 3)
150
712
9.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)



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