W45NM50 datasheet(2/9 Pages) STMICROELECTRONICS

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STW45NM50

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Table 3: Absolute Maximum ratings

(*)Pulse width limited by safe operating area

(1)ISD ≤45A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

Table 4: Thermal Data

Table 5: Avalanche Characteristics

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 6: On/Off

Symbol

Parameter

Value

Unit

VGS

Gate- source Voltage

±30

Drain Current (continuous) at TC = 25°C

Drain Current (continuous) at TC = 100°C

28.4

IDM (*)

Drain Current (pulsed)

180

PTOT

Total Dissipation at TC = 25°C

417

Derating Factor

2.08

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

V/ns

Tstg

Storage Temperature

–65 to 150

°C

Max. Operating Junction Temperature

150

°C

Rthj-case

Thermal Resistance Junction-case

Max

0.3

°C/W

Rthj-amb

Thermal Resistance Junction-ambient

Max

°C/W

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 35 V)

810

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

500

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

µA

VDS = Max Rating, TC = 125 °C

100

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ±30 V

±100

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V, ID = 22.5 A

0.08

0.1

Ω

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