W45NM50 datasheet(3/9 Pages) STMICROELECTRONICS

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STW45NM50

ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 7: Dynamic

Table 8: Source Drain Diode

(2)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(3)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (2)

Forward Transconductance

VDS > ID(on) x RDS(on)max,ID = 22.5A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

3700

610

Coss eq. (3)

Equivalent Output

Capacitance

VGS = 0V, VDS = 0V to 400V

325

Gate Input Resistance

f=1 MHz Gate DC Bias = 0

Test Signal Level = 20mV

Open Drain

1.7

Ω

td(on)

Turn-on Delay Time

Rise Time

VDD = 250V, ID = 24 A

RG =4.7Ω VGS = 10 V

(see Figure 14)

td(off)

Turn-off Delay Time

Fall Time

Cross-over Time

VDD = 400 V, ID = 45 A, RG = 4.7Ω,

VGS = 10 V

(see Figure 14)

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 400V, ID = 45 A,

VGS = 10V

(see Figure 18)

117

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

ISDM (3)

Source-drain Current (pulsed)

180

VSD (2)

Forward On Voltage

ISD = 45 A, VGS = 0

1.5

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 40 A, di/dt = 100A/µs,

VDD = 100 V, Tj = 25°C

(see Figure 16)

520

7.8

µC

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 40 A, di/dt = 100A/µs,

VDD = 100 V, Tj = 150°C

(see Figure 16)

680

11.2

µC

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