BDT82F datasheet(2/2 Pages) ISC

Il numero della parte	BDT82F

Spiegazioni elettronici	isc Silicon PNP Power Transistors

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

BDT82F/84F/86F/88F

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BDT82F

-60

BDT84F

-80

BDT86F

-100

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

BDT88F

IC= -30mA; IB= 0

-120

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -5A; IB= -0.5A

-1.0

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -7A; IB= -0.7A

-1.6

VBE(on)

Base-Emitter On Voltage

IC= -5A ; VCE= -4V

-1.5

ICES

Collector Cutoff Current

VCE= 0.8VCBOmax; VBE= 0

-1

ICBO

Collector Cutoff Current

VCB= VCBOmax; IE= 0

-0.2

IEBO

Emitter Cutoff Current

VEB= -7V; IC= 0

-0.1

hFE-1

DC Current Gain

IC= -50mA ; VCE= -10V

hFE-2

DC Current Gain

IC= -5A ; VCE= -4V

Current-Gain—Bandwidth Product

IC= -0.5A ; VCE= -10V

MHz

Switching Times

ton

Turn-On Time

μs

toff

Turn-Off Time

IC= -7A; IB1= -IB2= -0.7A

μs

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