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BDT82F Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte BDT82F
Spiegazioni elettronici  isc Silicon PNP Power Transistors
PDF  2 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDT82F Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
BDT82F/84F/86F/88F
DESCRIPTION
·DC Current Gain -hFE = 40(Min)@ IC= -5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F;
-100V(Min)- BDT86F; -120V(Min)- BDT88F
·Complement to Type BDT81F/83F/85F/87F
APPLICATIONS
·Designed for use in audio output stages and general amplifer
and switching applications
ABSOLUTE MAXIMUM RATINGS(T =25℃
a
)
SYMBOL
PARAMETER
VALUE
UNIT
BDT82F
-60
BDT84F
-80
BDT86F
-100
VCBO
Collector-Base Voltage
BDT88F
-120
V
BDT82F
-60
BDT84F
-80
BDT86F
-100
VCEO
Collector-Emitter Voltage
BDT88F
-120
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-15
A
ICM
Collector Current-Peak
-20
A
IB
B
Base Current
-4
A
PC
Collector Power Dissipation
TC=25℃
36
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
6
℃/W
isc Website：www.iscsemi.cn


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