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TIP126 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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TIP126 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor TIP126 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -0.1A, IB= 0 B -80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A, IB= -12mA B -2.0 V VCE(sat)-2 Collector-Emitter Saturation voltage IC= -5A, IB= -20mA B -4.0 V VBE(on) Base-Emitter On Voltage IC= -3.0A; VCE= -3V -2.5 V ICBO Collector Cutoff Current VCB= -80V, IE= 0 -0.2 mA ICEO Collector Cutoff Current VCE= -40V, IB= 0 -0.5 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -2 mA hFE-1 DC Current Gain IC= -0.5A; VCE= -3V 1000 hFE-2 DC Current Gain IC= -3.0A; VCE= -3V 1000 COB Output Capacitance IE= 0; VCB= -10V, f= 0.1MHz 300 pF isc Website:www.iscsemi.cn |
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