TIP126 datasheet(1/2 Pages) ISC

Il numero della parte	TIP126

Spiegazioni elettronici	isc Silicon PNP Darlington Power Transistor

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

TIP126

DESCRIPTION

·High DC Current Gain-

: hFE = 1000(Min)@ IC= -3A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -80V(Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat) = -2.0V(Max)@ IC= -3A

= -4.0V(Max)@ IC= -5A

·Complement to Type TIP121

APPLICATIONS

·Designed for general purpose amplifier and low speed

switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-5

A

ICM

Collector Current-Peak

-8

A

IB

B

Base Current-DC

-120

mA

Collector Power Dissipation

TC=25℃

65

PC

Collector Power Dissipation

Ta=25℃

2

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.92

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

62.5

℃/W

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