AS4DDR232M72PBG-3SLASHIT datasheet(4/28 Pages) AUSTIN

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2.4 G

2.4 Gbbbbb SDRAM-DDR2

SDRAM-DDR2

AS4DDR232M72PBG

Rev. 2.0 5/07

Austin Semiconductor, Inc. ● Austin, Texas ● 512.339.1188 ● www.austinsemiconductor.com

Austin Semiconductor, Inc.

DESCRIPTION

The 2.4Gb DDR2 SDRAM, a high-speed CMOS, dynamic

random-access memory containing 2,684,354,560 bits.

Each of the five chips in the MCP are internally configured

as 4-bank DRAM. The block diagram of the device is

shown in Figure 2. Ball assignments and are shown in

Figure 3.

The 2.4Gb DDR2 SDRAM uses a double-data-rate

architecture to achieve high-speed operation. The double

data rate architecture is essentially a 4n-prefetch

architecture, with an interface designed to transfer two

data words per clock cycle at the I/O balls. A single read

or write access for the x72 DDR2 SDRAM effectively

consists of a single 4n-bit-wide, one-clock-cycle data

transfer at the internal DRAM core and four corresponding

n-bit-wide, one-half-clock-cycle data transfers at the I/O

balls.

A bidirectional data strobe (DQS, DQS#) is transmitted

externally, along with data, for use in data capture at the

receiver. DQS is a strobe transmitted by the DDR2

SDRAM during READs and by the memory controller

during WRITEs. DQS is edge-aligned with data for READs

and center-aligned with data for WRITEs. There are

strobes, one for the lower byte (LDQS, LDQS#) and one

for the upper byte (UDQS, UDQS#).

The MCP DDR2 SDRAM operates from a differential clock

(CK and CK#); the crossing of CK going HIGH and CK#

going LOW will be referred to as the positive edge of CK.

Commands (address and control signals) are registered

at every positive edge of CK. Input data is registered on

both edges of DQS, and output data is referenced to both

edges of DQS, as well as to both edges of CK.

Read and write accesses to the DDR2 SDRAM are burst

oriented; accesses start at a selected location and

continue for a programmed number of locations in a

programmed sequence. Accesses begin with the

registration of an ACTIVE command, which is then followed

by a READ or WRITE command. The address bits

registered coincident with the ACTIVE command are used

to select the bank and row to be accessed. The address

bits registered coincident with the READ or WRITE

command are used to select the bank and the starting

column location for the burst access.

The DDR2 SDRAM provides for programmable read or

write burst lengths of four or eight locations. DDR2

SDRAM supports interrupting a burst read of eight with

another read, or a burst write of eight with another write.

An auto precharge function may be enabled to provide a

self-timed row precharge that is initiated at the end of the

burst access.

As with standard DDR SDRAMs, the pipelined, multibank

architecture of DDR2 SDRAMs allows for concurrent

operation, thereby providing high, effective bandwidth by

hiding row precharge and activation time.

A self refresh mode is provided, along with a power-saving

power-down mode.

All inputs are compatible with the JEDEC standard for

SSTL_18. All full drive-strength outputs are SSTL_18-

compatible.

GENERAL NOTES

• The functionality and the timing specifications

discussed in this data sheet are for the DLLenabled

mode of operation.

• Throughout the data sheet, the various figures and

text refer to DQs as ¡°DQ.¡± The DQ term is to be

interpreted as any and all DQ collectively, unless

specifically stated otherwise. Additionally, each chip

is divided into 2 bytes, the lower byte and upper

byte. For the lower byte (DQ0¨CDQ7), DM refers to

LDM and DQS refers to LDQS. For the upper byte

(DQ8¨CDQ15), DM refers to UDM and DQS refers to

UDQS.

• Complete functionality is described throughout

the document and any page or diagram may have

been simplified to convey a topic and may not be

inclusive of all requirements.

• Any specific requirement takes precedence over a

general statement.

INITIALIZATION

DDR2 SDRAMs must be powered up and initialized

in a predefined manner. Operational procedures other

than those specified may result in undefined operation.

The following sequence is required for power up and

initialization and is shown in Figure 4 on page 8.

1. Applying power; if CKE is maintained below 0.2 x

CCQ, outputs remain disabled. To guarantee RTT

(ODT resistance) is off, V

REF must be valid and a

low level must be applied to the ODT ball (all other

inputs may be undefined, I/Os and outputs must be

less than V

CCQ during voltage ramp time to avoid

DDR2 SDRAM device latch-up). At least one of the

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