AD8432ACPZ-R7 datasheet(5/28 Pages) AD

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AD8432

Rev. 0 | Page 5 of 28

ABSOLUTE MAXIMUM RATINGS

MAXIMUM POWER DISSIPATION

Table 2.

Parameter

Rating

Voltage

Supply Voltage

5.5 V

Input Voltage

0 V to VPS

Power Dissipation

120 mW

Temperature

Operating Temperature

–40°C to +85°C

Storage Temperature

–65°C to +150°C

Package Glass Transition Temperature (TG)

150°C

Lead Temperature (Soldering, 60 sec)

300°C

The maximum safe power dissipation for the AD8432 is limited

by the associated rise in junction temperature (TJ) on the die. At

approximately 150°C, which is the glass transition temperature,

the properties of the plastic change. Even temporarily exceeding

this temperature limit may change the stresses that the package

exerts on the die, permanently shifting the parametric performance

of the amplifiers. Exceeding a temperature of 150°C for an

extended period can cause changes in silicon devices, potentially

resulting in a loss of functionality.

ESD CAUTION

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

THERMAL RESISTANCE

θJA is specified for the worst-case conditions, that is, a device

soldered in a circuit board for surface-mount packages. The θJA

values in Table 3 assume a 4-layer JEDEC standard board with

zero airflow.

Table 3. Thermal Resistance1

Parameter

θJA

θJC

θJB

ΨJT

Unit

40-Lead LFCSP

57.9

11.2

35.9

1.1

°C/W

1 4-Layer JEDEC board (2S2P).

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