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PBLS2001D Scheda tecnica(PDF) 9 Page - NXP Semiconductors |
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PBLS2001D Scheda tecnica(HTML) 9 Page - NXP Semiconductors |
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9 / 16 page ![]() PBLS2001D_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 27 August 2009 9 of 16 NXP Semiconductors PBLS2001D 20 V PNP BISS loadswitch Tamb =25 °CIC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C Fig 9. TR1 (PNP): Collector current as a function of collector-emitter voltage; typical values Fig 10. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values Tamb =25 °C (1) IC/IB = 100 (2) IC/IB =50 (3) IC/IB =10 Tamb =25 °C (1) IC/IB = 100 (2) IC/IB =50 (3) IC/IB =10 Fig 11. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values Fig 12. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values 006aaa420 VCE (V) −0 −6 −4 −2 −0.8 −1.2 −0.4 −1.6 −2.0 IC (A) −0 IB = −13 mA −10.4 mA −11.7 mA −9.1 mA −6.5 mA −3.9 mA −5.2 mA −2.6 mA −1.3 mA −7.8 mA 006aaa421 10 1 102 RCEsat ( Ω) 10−1 IC (mA) −10−1 −104 −103 −1 −102 −10 (1) (2) (3) 006aaa422 −10−1 −10−2 −1 VCEsat (V) −10−3 IC (mA) −10−1 −104 −103 −1 −102 −10 (1) (2) (3) 006aaa423 IC (mA) −10−1 −104 −103 −1 −102 −10 1 10 102 103 RCEsat ( Ω) 10−1 (1) (2) (3) |
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