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PBLS2001D Scheda tecnica(PDF) 10 Page - NXP Semiconductors |
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PBLS2001D Scheda tecnica(HTML) 10 Page - NXP Semiconductors |
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10 / 16 page ![]() PBLS2001D_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 27 August 2009 10 of 16 NXP Semiconductors PBLS2001D 20 V PNP BISS loadswitch VCE =5V (1) Tamb = 150 °C (2) Tamb =25 °C (3) Tamb = −40 °C IC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −40 °C Fig 13. TR2 (NPN): DC current gain as a function of collector current; typical values Fig 14. TR2 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values VCE = 0.3 V (1) Tamb = −40 °C (2) Tamb =25 °C (3) Tamb = 100 °C VCE =5V (1) Tamb = −40 °C (2) Tamb =25 °C (3) Tamb = 100 °C Fig 15. TR2 (NPN): On-state input voltage as a function of collector current; typical values Fig 16. TR2 (NPN): Off-state input voltage as a function of collector current; typical values IC (mA) 10−1 102 10 1 006aaa015 102 10 103 hFE 1 (3) (2) (1) IC (mA) 1102 10 006aaa014 102 103 VCEsat (mV) 10 (1) (3) (2) IC (mA) 10−1 102 10 1 006aaa016 10 1 102 VI(on) (V) 10−1 (1) (3) (2) 006aaa017 IC (mA) 10−2 10 1 10−1 1 10 VI(off) (V) 10−1 (1) (2) (3) |
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