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dsPIC30F2012 Scheda tecnica(PDF) 52 Page - Microchip Technology |
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dsPIC30F2012 Scheda tecnica(HTML) 52 Page - Microchip Technology |
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52 / 206 page ![]() dsPIC30F2011/2012/3012/3013 DS70139F-page 52 © 2008 Microchip Technology Inc. 5.6.3 LOADING WRITE LATCHES Example 5-2 shows a sequence of instructions that can be used to load the 96 bytes of write latches. 32 TBLWTL and 32 TBLWTH instructions are needed to load the write latches selected by the Table Pointer. 5.6.4 INITIATING THE PROGRAMMING SEQUENCE For protection, the write initiate sequence for NVMKEY must be used to allow any erase or program operation to proceed. After the programming command has been executed, the user must wait for the programming time until programming is complete. The two instructions following the start of the programming sequence should be NOPs as shown in Example 5-3. EXAMPLE 5-2: LOADING WRITE LATCHES EXAMPLE 5-3: INITIATING A PROGRAMMING SEQUENCE ; Set up a pointer to the first program memory location to be written ; program memory selected, and writes enabled MOV #0x0000,W0 ; MOV W0,TBLPAG ; Initialize PM Page Boundary SFR MOV #0x6000,W0 ; An example program memory address ; Perform the TBLWT instructions to write the latches ; 0th_program_word MOV #LOW_WORD_0,W2 ; MOV #HIGH_BYTE_0,W3 ; TBLWTL W2,[W0] ; Write PM low word into program latch TBLWTH W3,[W0++] ; Write PM high byte into program latch ; 1st_program_word MOV #LOW_WORD_1,W2 ; MOV #HIGH_BYTE_1,W3 ; TBLWTL W2,[W0] ; Write PM low word into program latch TBLWTH W3,[W0++] ; Write PM high byte into program latch ; 2nd_program_word MOV #LOW_WORD_2,W2 ; MOV #HIGH_BYTE_2,W3 ; TBLWTL W2, [W0] ; Write PM low word into program latch TBLWTH W3, [W0++] ; Write PM high byte into program latch • • • ; 31st_program_word MOV #LOW_WORD_31,W2 ; MOV #HIGH_BYTE_31,W3 ; TBLWTL W2, [W0] ; Write PM low word into program latch TBLWTH W3, [W0++] ; Write PM high byte into program latch Note: In Example 5-2, the contents of the upper byte of W3 has no effect. DISI #5 ; Block all interrupts with priority <7 for ; next 5 instructions MOV #0x55,W0 ; MOV W0,NVMKEY ; Write the 0x55 key MOV #0xAA,W1 ; MOV W1,NVMKEY ; Write the 0xAA key BSET NVMCON,#WR ; Start the erase sequence NOP ; Insert two NOPs after the erase NOP ; command is asserted |
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